features d trenchfet r power mosfet d optimized for high- or low-side applications d dc/dc converters d synchronous rectifiers SUU50N03-09P vishay siliconix document number: 72420 s-41696?rev. b, 20-sep-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ? ) i d (a) b 3 0 0.0095 @ v gs =10v 63 b 30 0.014 @ v gs =4.5v 52 b d g s n-channel mosfet order number: SUU50N03-09P SUU50N03-09P?e3 (lead (pb)-free) to-251 s gd top view and drain-tab absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs ? 20 v c o n t i n u o u s d r a i n c u r r e n t a t c =25 _ c i d 63 b continuous drain current a t c = 100 _ c i d 44.5 b pulsed drain current i dm 50 a continuous source current (diode conduction) a i s 10 avalanche current l = 0 1 m h i as 35 single pulse avalanche energy l=0.1mh e as 61 mj m a x i m u m p o w e r d i s s i p a t i o n t c =25 _ c p d 65.2 w maximum power dissipation t a =25 _ c p d 7.5 a w operating junction and storage temperature range t j ,t stg --55 to 175 _ c thermal resistance ratings parameter symbol typical maximum unit m a x i m u m j u n c t i o n t o a m b i e n t a t 10 sec r 16 20 maximum junction-to-ambient a steady state r thja 40 50 _ c/w maximum junction-to-case r thjc 1.8 2.3 c / notes a. surface mounted on fr4 board, t 10 sec. b. based on maximum allowable junction temperature, package limitation current is 50 a. www..net
SUU50N03-09P vishay siliconix www.vishay.com 2 document number: 72420 s-41696?rev. b, 20-sep-04 specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250 m a 30 v gate threshold voltage v gs(th) v ds =v gs ,i d = 250 m a 1.0 3.0 v gate-body leakage i gss v ds =0v,v gs = ? 20 v ? 100 na z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v ds =30v,v gs =0v 1 m a zero gate v oltage drain current i dss v ds =30v,v gs =0v,t j = 125 _ c 50 m a on-state drain current b i d(on) v ds =5v,v gs =10v 50 a v gs =10v,i d =20a 0.0076 0.0095 drain-source on-state resistance b r ds(on) v gs =10v,i d =20a,t j = 125 _ c 0.015 ? d r a i n s o u r c e o n s t a t e r e s i s t a n c e r d s ( o n ) v gs =4.5v,i d =20a 0.0115 0.014 ? dynamic a input capacitance c iss 2200 output capacitance c oss v gs =0v,v ds =25v,f=1mhz 410 pf reverse transfer capacitance c rss 180 p gate resistance r g 1.5 ? total gate charge c q g 15 23 gate-source charge c q gs v ds =15v, v gs =4.5v,i d =50a 7.5 nc gate-drain charge c q gd d s 5 , g s 5 , d 5 0 5.0 c turn-on delay time c t d(on) 9 15 rise time c t r v d d =15 v ,r l =0.3 ? 80 120 n s turn-off delay time c t d(off) v d d = 1 5 v , r l = 0 . 3 ? ? 50 a, v gen =10v,r g =2.5 ? 22 35 ns fall time c t f g 8 12 source-drain diode ratings and characteristic (t c =25 _ c) pulsed current i sm 100 a diode forward voltage b v sd i f =50a,v gs =0v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ m s 35 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 m s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 _ c unless noted) 0 30 60 90 120 0246810 0 30 60 90 120 0123456 output characteristics transfer characteristics v ds -- drain-to-source voltage (v) -- drain current (a) i d v gs -- gate-to-source voltage (v) -- drain current (a) i d 25 _ c -- 5 5 _ c 5v t c = 125 _ c v gs =10thru6v 3v 4v 2v www..net
SUU50N03-09P vishay siliconix document number: 72420 s-41696?rev. b, 20-sep-04 www.vishay.com 3 typical characteristics (25 _ c unless noted) 0 2 4 6 8 10 0 6 12 18 24 30 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080100 0 20 40 60 80 100 0 1020304050 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance gate charge transconductance on-resistance vs. drain current -- gate-to-source voltage (v) -- on-resistance ( q g -- total gate charge (nc) i d -- drain current (a) v ds -- drain-to-source voltage (v) c -- capacitance (pf) r ds(on) ? ) v gs -- transconductance (s) g fs v ds =15v i d =30a v gs =10v v gs =4.5v c rss t c =--55 _ c 25 _ c 125 _ c c iss i d -- drain current (a) c oss 0.0 0.4 0.8 1.2 1.6 2.0 --50 --25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j -- junction temperature ( _ c) v sd -- source-to-drain voltage (v) -- source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs =10v i d =30a t j =25 _ c t j = 150 _ c 0 10 r ds(on) -- on-resiistance (normalized) www..net
SUU50N03-09P vishay siliconix www.vishay.com 4 document number: 72420 s-41696?rev. b, 20-sep-04 thermal ratings 0 5 10 15 20 25 0 25 50 75 100 125 150 175 safe operating area v ds -- drain-to-source voltage (v) -- drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a =25 _ c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt temperature t a -- ambient temperature ( _ c) -- drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1ms 10 ms 100 ms dc 10, 100 m s 1s 1000 100 0.1 10 s 100 s limited by r ds(on) 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 110 0.2 0.1 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse www..net
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